| Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling |
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| 引用本文： | 刘乃清,黄立捷,王瑞强,胡梁宾. Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling[J]. 中国物理 B, 2016, 25(2): 27201-027201. DOI: 10.1088/1674-1056/25/2/027201 |
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| 作者姓名： | 刘乃清 黄立捷 王瑞强 胡梁宾 |
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| 作者单位： | Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 11474106). |
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| 摘 要： | We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.
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| 收稿时间： | 2015-07-29 |
Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling |
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| Affiliation: | Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China |
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| Abstract: | We have studied the characteristics of current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling. It was found that within some parameter regions the magnitude of the current induced nonequilibrium spin polarization density in such structures will increase (or decrease) with the decrease (or increase) of the charge current density, in contrast to that found in normal spin-orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection. |
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| Keywords: | semiconductor/superconductor junctions spin-orbit coupling Andreev reflection current induced spin polarization |
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