Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating |
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Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | The factors influencing the crosstalk of silicon-on-insulator(SOI) nanowire arrayed waveguide grating(AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 d B through adopting 800 nm arrayed waveguide width. |
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Keywords: | SOI nanowire AWG crosstalk phase errors |
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