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Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe_(12)O_(22)
Institution:1.Chinese Aeronautical Establishment, Beijing 100012, China;2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract:We report on the magnetic and magnetoelectric properties of the Y-type hexaferrite BaSrZnMgFe_(12)O_(22),which undergoes transitions from a collinear ferrimagnetic phase to a proper screw phase at 310 K and to a longitudinal conical phase at 45 K.Magnetic and electric measurements revealed that the magnetic structure with spiral spin order can be modified by applying a magnetic field,resulting in magnetically controllable electric polarization.It was observed that BaSrZnMgFe_(12)O_(22)exhibits an anomalous magnetoelectric memory effect:the ferroelectric state can be partially recovered from the paraelectric phase with collinear spin structure by reducing magnetic field at 20 K.We ascribe this memory effect to the pinning of multiferroic domain walls,where spin chirality and structure are preserved even in the nonpolar collinear spin state.
Keywords:multiferroic  magnetoelectric effect  memory effect  
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