Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature |
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Institution: | 1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan |
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Abstract: | In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω· mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. |
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Keywords: | metal-oxide-semiconductor heterostructure field-effect transistors low temperature ohmic process inductively coupled plasma |
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