Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method |
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作者姓名: | 樊继斌 丁晓甫 刘红侠 谢鹏飞 张袁涛 廖清良 |
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作者单位: | 1. School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;2. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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摘 要: | High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ /Ge interface. However,these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide(SRPO) method to improve the thermodynamic stability of the high-κ /Ge interface. The x-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM) results indicate that the GeO volatilization of the high-κ /Ge gate stack is efficiently suppressed after 500℃ annealing, and the electrical characteristics are greatly improved.
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收稿时间: | 2015-07-11 |
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