Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate |
| |
Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
Abstract: | This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si (001) substrate by metal-organic vapor-phase epitaxy. Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface. |
| |
Keywords: | phase modulation GaAs grooves Si |
本文献已被 CNKI 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|