首页 | 本学科首页   官方微博 | 高级检索  
     


Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
Authors:Mohsen Mahmoudi  Zahra Ahangari  Morteza Fathipour
Affiliation:1. Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran;2. Young Researchers and Elite Club, Yadegar-e-Imam Khomeini (RAH) Shahre-Rey Branch, Islamic Azad University, Tehran, Iran
Abstract:The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor(DG ASi NR FET)are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green's function(NEGF) approach self-consistently coupled with a three-dimensional(3D) Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASi NR FET. A novel two-parameter strain magnitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing Hf O2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance.Furthermore, a general model power(GMP) is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASi NR under strain.
Keywords:silicene  double-gate field-effect-transistor  non-equilibrium Green'  s function  tight binding  
本文献已被 CNKI 等数据库收录!
点击此处可从《中国物理 B》浏览原始摘要信息
点击此处可从《中国物理 B》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号