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High-performance germanium n~+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature |
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| Institution: | 1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;2. Xiamen University of Technology, Xiamen 361005, China;3. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 449-791, Korea |
| Abstract: | High-performance Ge n+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n+/p junction has a rectification ratio of 5.6×104 and a forward current of 387 A/cm2 at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. |
| Keywords: | germanium metal-induced dopant activation NiGe n+/P junction |
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