High performance photodetectors based on high quality InP nanowires |
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Institution: | Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics Science, Hunan University, Changsha 410082, China |
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Abstract: | In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. |
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Keywords: | InP nanowires small diameter photodetector back-gate voltage |
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