Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor |
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Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract: | Trap-assisted tunneling(TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor(TFET). In this paper, we assess subthreshold performance of double gate TFET(DG-TFET) through a band-to-band tunneling(BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile(D_(it)) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. |
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Keywords: | trap-assisted tunneling (TAT) tunnel field-effect transistors (TFETs) optical phonon scattering (OP) acoustic phonon scattering (AP) |
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