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Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method |
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| Affiliation: | 1.School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;2.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Abstract: | A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor(HEMT) switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E_(ij) within 3.83% show the great agreement between the simulated S-parameters and the measured data. |
| Keywords: | GaN high-electron-mobility transistor switch small signal modeling parameter extraction error percentage |
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