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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co_2MnSi/graphene/n-Ge junction
Affiliation:School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China
Abstract:We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.
Keywords:Co2MnSi/graphene/n-Ge junction  Fermi-level depinning  Schottky barrier height  metal-induced gap states (MIGS)  
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