| Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer |
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| 引用本文： | 贾晓洁,周春兰,朱俊杰,周肃,王文静.Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer[J].中国物理 B,2016,25(12):127301-127301. |
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| 作者姓名： | 贾晓洁 周春兰 朱俊杰 周肃 王文静 |
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| 作者单位： | 1. The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
2. Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076). |
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| 摘 要： | It is studied in this paper that the electrical characteristics of the interface between Si O_y N_x/Si N_x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the Si O_y N_x layer on interface parameters, such as interface state density Ditand fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin Si O_y N_x layer between the Si N_x and the silicon wafer can suppress Qfin the film and Ditat the interface. The positive Qfand Ditand a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the Si O_y N_x film increasing. Prepared by deposition at a low temperature and a low ratio of N_2O/Si H_4 flow rate, the Si O_y N_x/Si N_x stacks result in a low effective surface recombination velocity(Seff) of 6 cm/s on a p-type 1 ?·cm~(–5) ?·cm FZ silicon wafer.The positive relationship between Seffand Ditsuggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it.
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| 收稿时间： | 2016-07-26 |
Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer |
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| Institution: | 1. The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
2. Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway |
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| Abstract: | It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. |
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| Keywords: | solar cell interface passivation |
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