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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array
Institution:1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; 2. Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing 210000, China
Abstract:Three-dimensional(3D) crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.
Keywords:3-dimensional resistive random access memory (RRAM)  thermal effect  endurance performance  
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