Thermal effect on endurance performance of 3-dimensional RRAM crossbar array |
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Institution: | 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
2. Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing 210000, China |
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Abstract: | Three-dimensional(3D) crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation. |
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Keywords: | 3-dimensional resistive random access memory (RRAM) thermal effect endurance performance |
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