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Effects of Si surficial structure on transport properties of La_(2/3)Sr_(1/3)MnO_3 films
Institution:1.Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center, School of Physics, Nanjing University, Nanjing 210093, China;2.Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Abstract:La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.
Keywords:La2/3Sr1/3MnO3 film  silicon  microstructure  magnetoresistance  
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