A3B5 nanowhiskers: MBE growth and properties |
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| Authors: | G. E. Cirlin A. A. Tonkikh Yu. B. Samsonenko I. P. Soshnikov N. K. Polyakov V. G. Dubrovskii V. M. Ustinov N. V. Sibirev |
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| Affiliation: | (1) Ioffe Physical Technical Institute, Russian Acad. Sci., Politekhnicheskaya 26, 194021 St.-Petersburg, Russia;(2) Institute for Analytical Instrumentation, Russian Acad. Sci., 190103, Rizhsky 26, St.-Petersburg, Russia;(3) St.-Petersburg Physico-Technical Centre, Russian Acad. Sci. for Research and Education, Khlopina 8/3, 195220 St.-Petersburg, Russia |
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| Abstract: | The structural properties of GaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The maximum length of NWs is several times (up to 10) larger than the effective thickness of deposited GaAs. A kinetic model of the diffusion-induced NW rowth is used to predict the dependence of NW length on the technologically controlled MBE growth conditions. The obtained results demonstrate that the NW growth is controlled by the adatom diffusion towards their tip rather than by the conventional vapor-liquid-solid mechanism. The growth conditions influence on the NW morphology may be used for the controlled fabrication of NWs by MBE for different applications. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005. |
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| Keywords: | molecular beam epitaxy nanowhiskers GaAs structural properties |
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