High-power 2.8 W blue-violet laser diode for white light sources |
| |
Authors: | Rei Hashimoto Hung Hung Jongil Hwang Shinji Saito Shinya Nunoue |
| |
Affiliation: | 1. Corporate Research & Development Center, Toshiba Corporation, Kawasaki, 212-8582, Japan
|
| |
Abstract: | High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1A operating current. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |