One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma |
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| Authors: | Tianyuan Huang Chenggang Jin Jun Yu Yan Yang Lanjian Zhuge Xuemei Wu Zhendong Sha |
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| Institution: | 1.College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology,Soochow University,Suzhou,China;2.Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China,Soochow University,Suzhou,China;3.Analysis and Testing Center,Soochow University,Suzhou,China;4.International Center for Applied Mechanics, State Key Laboratory for Strength and Vibration of Mechanical Structures,Xi’an Jiaotong University,Xi’an,China |
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| Abstract: | A steady-state and high-flux helicon-wave excited N2 plasma was used to oxynitride Si substrates for the synthesis of silicon oxynitride (SiON) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) have been extensively used to characterize surface quality of the SiON films, and it is found that a large amount of nitrogen (N) can be incorporated into the films. The result of XPS depth profiles shows that the N concentration is high near the surface and the oxide/Si interface. In the UPS spectra, absence of the reappearance of surface states suggests a resistance to clustering of the oxynitride layer. The N2 flux and Ar mixture quantity can facilitate tuning of the dissociation characteristics in N2 discharge. By modulating the N2 fractions, the N+ density reaches maximum at a N2/(N2 + Ar) flow-rate ratio of 0.5, resulting in incorporation of more N atoms into the SiON films. Considering the easy control of N2 plasma, our work opens up a new avenue for achieving high-yield SiON films at low temperature. |
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