Confinement-enhanced electron transport across a metal-semiconductor interface |
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| Authors: | Altfeder I B Golovchenko J A Narayanamurti V |
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| Institution: | Division of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138, USA. |
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| Abstract: | We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well. |
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