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Loss and gain in Bloch oscillating super-superlattices: THz Stark ladder spectroscopy
Authors:Peter Robrish   Jing Xu   Shigeki Kobayashi   Pavlos G. Savvidis   Borys Kolasa   Greg Lee   Dan Mars  S. James Allen  
Affiliation:aAgilent Laboratories, 3500 Deer Creek Rd., Palo Alto, CA 94304, USA;bUCSB, Physics Department, Santa Barbara, CA 93106, USA;cUCSB, Institute for Quantum and Complex Dynamics, Santa Barbara, CA 93106, USA;dInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Abstract:Bloch oscillation in electrically biased semiconductor superlattices offer broadband terahertz gain from DC up to the Bloch frequency or Stark splitting. Useful gain up to 2–3 THz can provide a basis for solid-state electronic oscillators operating at 10 times the frequency of existing devices.A major stumbling block is the inherent instability of the electrically biased doped superlattices to the formation of static or dynamic electric field domains. To circumvent this, we have fabricated super-superlattices in which a large superlattice is punctuated with heavily doped regions. The short superlattice sections have subcritical “nL” products.Room temperature, terahertz photon-assisted transport in short InGaAs/InAlAs superlattice cells allows us to determine the Stark ladder splitting as the superlattice is electrically biased and confirms the absence of electric field domains in short structures.Absorption of radiation from 1.5 to 2.5 THz by electrically biased InAs/AlSb super-superlattices exhibit a crossover from loss to gain as the Stark ladder is opened. Measurements are carried out at room temperature in a novel planar terahertz waveguide defined by photonic band gap sidewalls and loaded with an array of electrically biased super-superlattices. The frequency-dependent crossover voltage indicates not, vert, similar80% participation of the super-superlattice.
Keywords:Semiconductor superlattice   Terahertz   Bloch oscillator   Photon-assisted transport
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