Device for measuring doping impurities of Groups III and V in high-purity silicon by long-wavelength spectroscopy |
| |
Authors: | K. N. Boldyrev N. Yu. Boldyrev R. V. Kirillin |
| |
Affiliation: | 1. Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow oblast, 142190, Russia 2. OOO Gruppa NITOL, Moscow, 111250, Russia
|
| |
Abstract: | An experimental installation for analyzing electrically active impurities in high-purity silicon by investigating low-temperature transmission spectra withcompensation for donor-acceptor impurities is fabricated. The applicability of the method for studying both high-purity and doped silicon wafers is shown.Software for automatically computing the concentration of impurities is developed. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|