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Tuning the contact resistance in organic thin-film transistors with an organic-inorganic hybrid interlayer
Authors:Jun Li  Fan ZhouHua-Ping Lin  Xue-Yin JiangWen-Qing Zhu  Zhi-Lin Zhang
Affiliation:a Department of Materials Science, Shanghai University, Jiading, Shanghai 201800, People’s Republic of China
b Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People’s Republic of China
Abstract:We demonstrated the tunable contact resistance in pentacene thin film transistor (TFT) by inserting an organic-inorganic hybrid interlayer between Au electrode and pentacene layer. The contact resistance of pentacene-TFT varies with concentration of pentacene-TFT varies with concentration of MoOx in organic-inorganic hybrid interlayer. MoOx in organic-inorganic hybrid interlayer. The contact resistance of the device with 55 wt% MoOx doped pentacene interlayer is about 7.8 times smaller than that of device without interlayer at the gate voltage of −20 V. Comparing the properties of pentacene-TFT without interlayer, the performance of the pentacene-TFT with 55 wt% MoOx doped pentacene was significantly improved: saturation mobility increased from 0.39 to 0.87 cm2/V s, threshold voltage reduced from −21.3 to −7.2 V, and threshold swing varied from 3.75 to 1.39 V/dec. Our results indicated that the organic-inorganic hybrid interlayer is an effective way to improve the performance of p-channel OTFTs.
Keywords:85.30.TV   72.80.Le   81.07.Pr
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