Transient electron population and optical properties in a semiconductor quantum well |
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| Authors: | Zhiping Wang Benli YuXuqiang Wu Shenglai ZhenZhigang Cao Jun Zhu |
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| Institution: | Key Laboratory of Opto-Electronic Information Acquisition and Manipulation of Ministry of Education, Anhui University, Hefei 230601, China |
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| Abstract: | We investigate the transient behaviors of the dispersion and the absorption in a three-level GaAs/AlGaAs semiconductor quantum well system. It is found that the Fano interference and the energy splitting affect the transient behaviors dramatically, which can be used to manipulate efficiently the gain-absorption coefficient and group velocity of the probe field. The dependence of transient electron population on the Fano interference and the energy splitting is also discussed. |
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| Keywords: | Semiconductor quantum well Electron population Optical transient properties |
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