Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells |
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| Authors: | R.S. Dubey D.K. Gautam |
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| Affiliation: | a IACQER Advanced Research Laboratory for Nanomaterials and Devices, Swarnandhra College of Engineering and Technology, Seetharampuram, Narsapur (A.P.), India
b Department of Electronics, North Maharashtra University, Post Box 80, Umavinagar, Jalgaon (M.S.), India |
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| Abstract: | In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores. |
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| Keywords: | Porous silicon layers Electrochemical etching Red emission Optical properties Solar cells Absorption |
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