Fabrication and properties of Li-doped ZnCoO diluted magnetic semiconductor thin films |
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| Authors: | Liqiang ZhangZhizhen Ye Bin LuJianguo Lu Haiping HeYinzhu Zhang Liping ZhuJie Jiang Kewei WuBo He |
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| Institution: | a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People’s Republic of China |
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| Abstract: | Li-doped ZnCoO (ZnCoO:Li) diluted magnetic semiconductor thin films were prepared on SiO2 substrates by pulsed laser deposition. In ZnCoO:Li films, Co2+ substituted Zn2+ and Li occupied the interstitial sites behaving as donors. The ZnCoO:Li films are of high electron concentration in the 1020 cm−3 order and acceptable crystal quality with a hexagonal wurtzite structure. No cluster, precipitate, or second phase was found from the X-ray diffraction pattern and Co k-edge X-ray absorption near-edge structure measurements. The sp-d exchange interactions between the band electrons and the localized d electrons of Co ions substituting Zn ions were observed. The magnetization of ZnCoO:Li film is 0.61 μB/Co, higher than that of the ZnCoO film (0.49 μB/Co). The enhanced defect density and electron concentration due to the introduced Li donors may answer for the improvement of ferromagnetism at room temperature. |
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| Keywords: | Diluted magnetic semiconductor Co-Li codoped ZnO Pulsed laser deposition |
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