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Effect of annealing temperature on photocatalytic activity of ZnO thin films prepared by sol-gel method |
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| Authors: | Jianguo Lv Wanbing GongKai Huang Jianbo ZhuFanming Meng Xueping Song Zhaoqi Sun |
| Institution: | a Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China b School of Physics and Material Science, Anhui University, Hefei 230039, China c Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, China d Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China |
| Abstract: | Zinc oxide thin films are deposited on Si and quartz substrates using the sol-gel method. The thin films, annealed at 400, 600 and 800 °C respectively, are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), ultraviolet-visible spectrophotometer (UV-Vis), fluorescence spectrometer (FL) and the photocatalytic activity is tested by the decomposition of methyl orange dye under UV illumination. The results show that the mean grain size, surface-to-volume ratio, rms roughness and degradation efficiency of the thin films increases with increasing annealing temperature. In particular, ZnO thin film annealed at 800 °C exhibits the highest photocatalytic activity, degrading methyl orange by almost 88% in 180 min. Photocatalytic reaction mechanism of the ZnO thin films is discussed in detail, and the oxygen defects are proposed to be the active sites of the ZnO photocatalyst. |
| Keywords: | ZnO thin films Sol-gel method Photocatalytic activity Methyl orange |
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