Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers |
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| Institution: | 1. Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea;2. Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People''s Republic of China;1. Department of Mechatronics Engineering, Jeju National University, Jeju, South Korea;2. Department of Electronic Engineering Jeju National University, Jeju, South Korea;3. Department of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Science and Technology, Topi, Swabi, KPK, Pakistan;4. Center for Innovative Development of Science and New Technologies, Aini St. 299/2, Dushanbe, 734063, Tajikistan;1. College of Electronic Science & Technology and Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China;2. Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Science, Shanghai 200500, China;1. School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China;2. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials & College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China;3. State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, P. R. China.;4. Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea;1. Center for Sustainable Future Technologies, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino, Italy;2. Department of Applied Science and Technology (DISAT), Politecnico Di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy |
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| Abstract: | Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 × 104 s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms. |
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| Keywords: | Tristable switching Graphene quantum dot Poly(methyl methacrylate) Electrical characteristic Filament Conduction mechanisms |
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