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Core level spectroscopy and RHEED analysis of KGd0.95 Nd0.05(WO4)2 surface |
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| Authors: | V V Atuchin V G Kesler N Yu Maklakova L D Pokrovsky D V Sheglov |
| Institution: | (1) Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia;(2) Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia;(3) Innovation Department, Institute of Geology and Mineralogy, SB RAS, Novosibirsk, 630090, Russia;(4) Laboratory of Electron Microscopy and Submicron Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia |
| Abstract: | A study of the surface structure and electronic properties of (010) KGd0.95Nd0.05(WO4)2 (Nd:KGW) using RHEED analysis and XPS is presented. It is shown that Nd doping has a negligible effect on the core levels of the basic elements. A bombardment of the Nd:KGW crystal with 3-keV Ar ions results in surface amorphization accompanied by the generation of tungsten ions in lower valence states. |
| Keywords: | 33 60 Fy X-ray photoelectron spectra 61 66 Fn Inorganic compounds 82 80 Pv Electron spectroscopy (X-ray photoelectron (XPS) Auger electron spectroscopy (AES) etc ) |
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