集中力作用下硅中位错结构

本文用化学侵蚀法研究了硅单晶样品在800—1000℃印压得到的位错“花结”。实验结果说明:印压产生的位错分布在{111}滑移面上;位错线的取向大部分是<110>或<112>方向。分析并观察到在压印下有两种位错环,一种是柏格斯矢量沿<110>方向并平行于(111)印压面;一种是柏格斯矢量沿<110>方向并与印压面相交。对位错环的结构进行了分析。

THE STRUCTURE OF DISLOCATION LOOPS OF INDENTATION IN SILICON

The chemical etching method has been used to investigate the dislocation "rosette" of silicon single crystal specimens under indentation at temperatures 800-1000℃. Experimental results show that all the dislocations introduced in silicon due to indentation distribute in the {111} slip planes; the dislocation lines are mostly oriented along the <110> and <112> directions. Analysis indicates that dislocation loops with the Burgers vector along the <110> parallel to the {111} surface of indentation and with the Burgers vector along the <110> inclined with the surface of indentation, are present. Discussion of the structure of the dislocation half-loops is given.