Photoelectron spectroscopy of atomic core levels on the silicon surface: A review |
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Authors: | M V Gomoyunova I I Pronin |
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Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia |
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Abstract: | Recent studies of the atomic structure of the single-crystal silicon surface (both clean and covered by adsorbates) that are
performed by high-resolution core-level photoelectron spectroscopy using synchrotron radiation are reviewed. The physical
principles of the method, experimental techniques, the spectrum processing procedure, and the procedure of determining the
energy shifts of the core levels in the subsurface layer are outlined. Emphasis is placed on the surface modes of silicon
2p spectra, which are observed for the main types of silicon surface reconstruction (Si(111)-7×7 and Si(100)-2×1), and on a
correlation between these modes and the atomic structure of the (111) and (100) surfaces. Also, particular attention is given
to the studies of the Ge/Si system, which is viewed as a promising material of nanoelectronics, as well as to those concerned
with metal and gas adsorption on basic (low-index) silicon faces. These studies clearly demonstrate that core-level photoelectron
spectroscopy provides extremely detailed information on the structure of adsorbed layers and on the adsorption-stimulated
reconstruction of the substrate surface. |
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