首页 | 本学科首页   官方微博 | 高级检索  
     


Preparation of GaN-based cross-sectional TEM specimens by laser lift-off
Authors:Zilan Li  Xiaodong Hu  Ke Chen  Ruijuan Nie  Xuhui Luo  Xiaoping Zhang  Tongjun Yu  Bei Zhang  Song Chen  Zhijian Yang  Zhizhong Chen  Guoyi Zhang
Affiliation:State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China. zealan@water.pku.edu.cn
Abstract:Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and the changes in structural quality are confined to approximately the first 250 nm of the epilayer. Clear TEM images of the whole epilayer and the InGaN quantum wells and the HRTEM images of the superlattice layer are demonstrated, showing that LLO is a quick and ideal method to study the crystal structure of the epilayer, especially if only the upper layers are of interest.
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号