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Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors
Abstract:The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction.It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells.The photo absorption coefficient of multiple quantum wells is also enhanced by a p-n junction.The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
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