Temperature dependence of the cathodoluminescence spectra of irradiated light-emitting-diode structures with multiple InGaN/GaN quantum wells |
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| Authors: | P S Vergeles E B Yakimov |
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| Institution: | 1. Institute of Microelectronic Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia
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| Abstract: | The cathodoluminescence spectra of regions of light-emitting structures with multiple InGaN/GaN quantum wells unirradiated and irradiated with an electron beam are investigated in the temperature range from liquid-nitrogen temperature to room temperature. It is shown that a new emission line with an energy of 2.69 eV emerges as a result of irradiation in addition to the initial 2.6 eV line. The intensity of the emission line associated with Mg in p-GaN also increases after irradiation. |
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