| 磁控溅射法制备AZO薄膜的工艺研究 |
| |
| 引用本文： | 张丽伟,卢景霄,段启亮,王海燕,李瑞,靳锐敏,王红娟,张宇翔.磁控溅射法制备AZO薄膜的工艺研究[J].电子元件与材料,2005,24(8):46-48. |
| |
| 作者姓名： | 张丽伟 卢景霄 段启亮 王海燕 李瑞 靳锐敏 王红娟 张宇翔 |
| |
| 作者单位： | 郑州大学物理工程学院,材料物理教育部重点实验室,河南,郑州,450052;新乡师范高等专科学校,河南,新乡,453000;郑州大学物理工程学院,材料物理教育部重点实验室,河南,郑州,450052 |
| |
| 摘 要： | 用XRD测试仪、分光光度计、四探针等测试仪器,探讨了制备气氛、退火温度和退火环境对AZO薄膜光电性能及结构的影响。结果表明:氧气和氩气的体积流量比为2∶1时,薄膜透光率最高(95.33%);退火有利于薄膜结晶;低于400℃退火时,温度越高薄膜电阻越小,超过400℃后,真空中退火温度再升高电阻变化不大,而空气中退火温度再升高电阻反而变大。
|
| 关 键 词： | 无机非金属材料 AZO薄膜 磁控溅射法 制备气氛 退火温度 |
| 文章编号： | 1001-2028(2005)08-0046-03 |
Technology Study of AZO Thin Films Made by Magnetron Sputtering |
| |
| ZHANG Li-wei,LU Jing-xiao,DUAN Qi-liang,WANG Hai-yan,LI Rui,JIN Rui-min,WANG Hong-juan,ZHANG Yu-xiang.Technology Study of AZO Thin Films Made by Magnetron Sputtering[J].Electronic Components & Materials,2005,24(8):46-48. |
| |
| Authors: | ZHANG Li-wei LU Jing-xiao DUAN Qi-liang WANG Hai-yan LI Rui JIN Rui-min WANG Hong-juan ZHANG Yu-xiang |
| |
| Abstract: | Resorting to XRD, spectrometer and four-probe devices, the influence of preparation atmosphere, annealing temperature and annealing environment on the structural and photoelectric properties of AZO films was researched. The results indicate that the transmittance of thin films reaches the maximum, 95.33%, when the cubic content ratio of oxygen to argon is 2:1. Anneal is in favor of the crystallization of AZO films. The resistance of thin films decreases with annealing temperatures increasing under 400℃. Whereas above 400℃, with annealing temperatures increasing, the resistance increases in air furnace but changes less in the vacuum furnace. |
| |
| Keywords: | inorganic non-metallic materials AZO thin films magnetron sputtering method making atmosphere Anneal temperature |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
