Impurity effects on the laser-induced crystallization of thin amorphous silicon film on glass substrate

Crystallization of 100 nm thick amorphous silicon (a-Si) films deposited on glass substrates was carried out using a dual-green-laser method. Depending on a-Si deposition method, either low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD), the density of impurities such as Al, K, and Na within the a-Si thin films significantly varied. For the high impurity case of LPCVD, grains of 200–300 nm in size were obtained, whereas for the PECVD case a maximum grain size of about 4 μm was achieved, satisfying the requirements for applications in commercial TFT devices. These results confirm that for the use of glass substrates in polycrystallization of a-Si, controlling the impurity density during substrate preparation is critical.