Crystal growth and conductivity investigations on BiVO4 single crystals |
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Authors: | L Hoffart U Heider R A Huggins W Witschel R Jooss A Lentz |
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Institution: | (1) Center for Solar Energy and Hydrogen Research, 89081 Ulm, Germany;(2) Department of Inorganic Chemistry, University of Ulm, 89069 Ulm, Germany |
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Abstract: | Some oxides with the scheelite structure are well known mixed ionic and electronic conductors. This structure family, with
the general composition ABO4, can be described as a layer structure derivative of the fluorite structure. The relations between the structural and the
electrical transport properties of these materials have been investigated. The model system used in this work was BiVO4, which shows both electronic and ionic conduction.
Single crystals of bismuth vanadate (BiVO4) were grown using the Czochralski technique. Single crystal boules up to 55 mm in diameter and up to 30 mm long were produced.
The crystallographic orientation was determined by the Laue method, and they were cleaved along 001] planes and polished
to optically perfect cubes with an edge length of 5 mm.
Two-point ac impedance measurements in the temperature range between 550°C and 700°C were performed. The conductivities were
measured as a function of the crystal orientation and showed strong anisotropy as expected from the crystal structure.
Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995 |
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