GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光管材料制备及表征

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。同时利用X射线双晶衍射,变温(10～300K)光致发光(PL)等方法检测分析了外延薄膜的结构和光电特性。在光致发光谱线中我们得到了发射波长850nm的谱峰,谱峰范围跨跃800～880nm,双晶回摆曲线结果显示了设计的结构得到实现。在注入电流140mA时,器件输出光谱的半峰全宽可以达到26nm,室温下连续输出功率达到6mW。

Research on Material Characteristics of GaAlAs/GaAs Superluminence Diodes

Superluminescent light emitting diode(SLD) is a kind of semiconductor light source with high performance comparing to those of laser diode and light emitting diode.One of the key device in fibre optic gyroscope systems is a superluminescent diode(SLD).In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.The epitaxial material was fabricated by molecular beam epitaxy(MBE) technique.Optical and structural characteristic of the film was studied by photoluminescence(PL) at different temperature,X-ray double crystal diffraction and electroche-mical C-V profiling method.The radition wavelength of 844 nm was obtained on PL spectrum(300 K).The experimental results of X-ray double crystal rocking curve and low temperature(10~300 K) PL show that the structure designed for superluminescent diode have been realized.The spectral FWHM over 26 nm,CW output power of over 6 mW have been achieved at operating current of 140 mA.