Theory of spin hall conductivity in n-doped GaAs |
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| Authors: | Engel Hans-Andreas Halperin Bertrand I Rashba Emmanuel I |
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| Institution: | Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA. |
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| Abstract: | We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. Science 306, 1910 (2004)]. |
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