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Evolution of the geometrical and electronic structures of Gan(n=2-26) clusters: a density-functional theory study
Authors:Song Bin  Cao Pei-lin
Institution:Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China. bzsong@css.zju.edu.cn
Abstract:Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the lowest-energy geometries and electronic structure of neutral gallium clusters containing up to 26 atoms. Harmonic vibrational frequency analysis is undertaken to assure that the lowest-energy geometries are real local minima. With increasing cluster size, we find that the gallium clusters tend to adopt compact structures. The structures comprise triangular units that connect each other with different dihedral angles. The lowest-energy structure can be obtained by capping an atom on the structure of smaller one. The capping site occurs at a site where interactions with more atoms are available. The binding energy evolves monotonically with size, but Ga(8), Ga(14), and Ga(20) exhibit particularly higher stability. Except Ga(2) and Ga(4), all even-numbered gallium clusters we studied are closed-shell singlet states with a substantial highest occupied and lowest unoccupied molecular orbitals gap. The odd-numbered clusters are open shell with a small gap. The size dependence of cluster's ionization potentials and electron affinities is discussed and compared with available experiment.
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