4 mm腔长高功率单管半导体激光器封装应力的研究

为了减小长腔长高功率单管半导体激光器在封装过程中引入的热应力，根据应力改变禁带宽度的原理，理论上推导了应力与波长漂移的关系，提出了一种通过测量激光器脉冲条件下的光谱来定量计算激光器应力的方法。利用这种方法得到的研究结果表明，焊接质量直接决定着应力的大小，由焊接质量的不同引起的应力差值超过了300 MPa，提出了优化焊接回流曲线的方法，使激光器的应力由原来129.7 MPa降低到53.4 MPa，该方法还有效的解决了封装应力随储存时间变化的问题。实验表明，激光器光谱图的测量分析是研究高功率单管半导体激光器封装应力的有效方法，也是检测分析烧结工艺的有效手段。

Study on Packaging-Induced Stress in 4 mm Cavity Length High-Power Single Emitter Semiconductor Laser

To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality.