首页 | 本学科首页   官方微博 | 高级检索  
     检索      

Rubrene薄层的位置对器件发光性能的影响及器件内激子复合区域的分析
引用本文:Xu DH,Li X,Wang XE,Zhao C,Zhao J,Deng ZB,Lü ZY,Chen Z.Rubrene薄层的位置对器件发光性能的影响及器件内激子复合区域的分析[J].光谱学与光谱分析,2011,31(2):340-343.
作者姓名:Xu DH  Li X  Wang XE  Zhao C  Zhao J  Deng ZB  Lü ZY  Chen Z
作者单位:1. 北京工商大学机械工程学院,北京,100037
2. 北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京,100044
基金项目:国家自然科学基金项目(61007021,60977027); 北京市教委科技计划面上项目(KM201010011009和KM200910011010); 北京市属高等学校人才强教计划项目(PHR201007122)资助
摘    要:通过在主体材料上蒸镀一层荧光染料超薄层的方法,研究了有机小分子5,6,11,12-tetraphenyl-naphthacene(rubrene)薄层在器件中不同位置时,有机电致发光器件(OLED)的电致发光光谱及发光性能.实验发现当rubrene薄层位于NPB/AlQ界面处时,器件的发光几乎都来自rubrene的发光...

关 键 词:有机电致发光器件  激子  载流子

Effect of rubrene position on the EL performance of the device and analysis of the exciton recombination zone
Xu Deng-Hui,Li Xiong,Wang Xiu-e,Zhao Ci,Zhao Jia,Deng Zhen-Bo,Lü Zhao-Yue,Chen Zheng.Effect of rubrene position on the EL performance of the device and analysis of the exciton recombination zone[J].Spectroscopy and Spectral Analysis,2011,31(2):340-343.
Authors:Xu Deng-Hui  Li Xiong  Wang Xiu-e  Zhao Ci  Zhao Jia  Deng Zhen-Bo  Lü Zhao-Yue  Chen Zheng
Institution:XU Deng-hui1,LI Xiong1,WANG Xiu-e1,ZHAO Ci1,ZHAO Jia1,DENG Zhen-bo2,Lü Zhao-yue2,CHEN Zheng2 1.School of Mechanical Engineering,Beijing Technology and Business University,Beijing 100037,China 2.Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China
Abstract:By using an ultrathin 5,6,11,12-tetraphenylnaphthacene(rubrene) layer deposited on the top of host materials,the influence of rubrene layer position on the electroluminescence(EL) spectra of organic light-emitting devices(OLEDs) was studied.When the rubrene layer is located at the interface between N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,18-biphenyl)-4,4'-diamine(NPB) and tris(8-hydroxyquinoline) aluminum(AlQ) layer,EL luminescence of the device is nearly coming from rubrene emission.From the analysis of the ...
Keywords:Organic light-emitting device(OLED)  Exciton  Carrier  
本文献已被 CNKI 万方数据 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号