Dielectronic recombination of Co-like tantalum |
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Authors: | Zhou Li Meng Fan-Chang Huang Min Chen Chong-Yang Wang Yan-Sen |
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Affiliation: | The Key Laboratory of Applied Ion Beam Physics, the Ministry of Education, Shanghai 200433, China; Shanghai EBIT Laboratory, Modern Physics Institute, Fudan University, Shanghai 200433, China |
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Abstract: | {Ab initio }calculation of the total dielectronicrecombination (DR) rate coefficient from the ground state of Co-liketantalum is performed using the relativistic distorted-waveapproximation with configuration interaction. The contributions tothe total DR rate coefficients are explicitly calculated from thecomplexes of Ni-like tantalum: $3s^23p^63d_{3 / 2}^3 3d_{5 / 2}^6{n}'{l}'$, $3s^23p^53d^{10}{n}'{l}'$, $3s3p^63d^{10}{n}'{l}'$,$3s^23p^63d^84l{n}'{l}'$, $3s^23p^53d^94l{n}'{l}'$ and$3s3p^63d^94l{n}'{l}'$ with ${n}' le 25$, and$3s^23p^63d^85l{n}'{l}'$ with ${n}' le 9$. The ${l}'$ and ${n}'$dependences of partial DR rate coefficients are investigated. Thecontributions from higher ${n}'$complexes are evaluated by alevel-by-level extrapolation method. The total DR rate coefficientsmainly come from the complex series $3s^23p^63d^84l{n}'{l}'$,$3s^23p^53d^94l{n}'{l}'$ and are fitted to an empirical formula withhigh accuracy. Comparison of the present results with those of otherworks shows that the previously published data underestimatesignificantly the DR rates of Co-like tantalum. |
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Keywords: | dielectronic recombination ratecoefficient Co-like tantalum |
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