Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region |
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Authors: | Robert P Sarzała Włodzimierz Nakwaski |
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Institution: | (1) Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź ul., Wólczańska 219, 93-005 Łódź, Poland |
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Abstract: | Structure optimisation of the GaAs-based GaInNAsSb/GaNAs quantum-well (QW) vertical-cavity surface-emitting diode lasers (VCSELs)
has been carried out using the comprehensive three-dimensional self-consistent physical model of their room-temperature (RT)
continuous-wave (CW) threshold operation. The model has been applied to investigate a possibility to use these devices as
carrier-wave lasing sources in the third-generation optical-fibre communication. In this simulation, all physical (optical,
electrical, thermal and gain) phenomena crucial for a laser operation including all important interactions between them are
taken into consideration. As expected, the 1.5λ-cavity VCSEL has been found to demonstrate the lowest RT CW threshold. However,
for many VCSEL applications, the analogous VCSEL equipped with a longer 3λ-cavity should be recommended because it exhibits
only slightly higher threshold but manifest much better mode selectivity – the desired single-fundamental-mode operation has
been preserved in these devices up to at least 380 K. The Auger recombination has been found to be decidedly the main reason
of the threshold current increase at higher temperatures. A proper initial red detuning of the resonator wavelength with respect
to the gain spectrum may drastically decrease CW lasing thresholds, especially at higher temperatures. |
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Keywords: | laser simulations vertical-cavity surface-emitting diode lasers 1 5-μ m emission |
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