Electron spin-lattice relaxation of Yb3+ and Gd3+ ions in glasses

The electron spin-lattice relaxation rate (T ₁ ^?1) was measured in two glass samples: (i) a phosphate glass doped with 1 wt% Yb₂O₃ and (ii) a Li₂Si₄O₉ glass sample doped with 0.2 wt% Gd₂O₃. In the Yb³⁺-doped glass sample,T ₁ was measured by an electron-spin-echo technique from 4.2 to 6 K, by the modulation method from 10 to 26 K and by the EPR linewidth from 30 to 100 K. It was found thatT ₁ ^?1 αT ⁿ withn=9 in the range 4.2–6 K.n decreased gradually as the temperature was increased and tended towards 2 above 40 K. Over the entire temperature range 4.2–100 K,T ₁ ^?1 was fitted toAT+BT ⁹ J ₈ (Θ _D/T) (whereA andB are two temperature-independent constants,J ₈ is the well-known Van Vleck integral andΘ _D is the Debye temperature). The value ofΘ _D (=46.3±0.9 K) so determined is in good agreement with that of Stevens and Stapleton from theirT ₁ measurements in the range 1.5 to 7 K. In the Gd³⁺-doped glass, it was observed thatT ₁ ^?1 αT over the range 50–150 K. The data for Ye³⁺-doped glass sample were accounted for by assuming that the phonon modulation of the ligand field is the dominant mechanism, associated with a low Debye temperature in accordance with the published data obtained by using other techniques to study lattice dynamics. On the other hand, the data on the Gd³⁺-doped glass sample were explained to be predominantly due to a mechanism involving Two-Level-Systems (TLS)