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Electronic relaxation observed in Mössbauer hyperfine spectra of Tm metal |
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| Authors: | B B Triplett N S Dixon L S Fritz Y Mahmud |
| Institution: | (1) Department of Physics, Stanford University, 94305 Stanford, CA, USA;(2) Present address: Intel Corporation, 95051 Santa Clara, CA, USA;(3) Present address: Department of Physics and Astronomy, Franklin and Marshall College, 17604 Lancaster, PA, USA;(4) Present address: Department of Physics, University of Jordan, Amman, Jordan |
| Abstract: | Hyperfine seectra observed with the Mössbauer effect in Tm metal can be explained by an electronic relaxation mechanism. In contrast to an earlier analysis which assumed the fast relaxation limit, the present interpretation is based on a simpler picture and accounts for the spectra well throughout the entire temperature range from helium temperatures to room temperature. |
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