| 浸没式ArF光刻最新进展 |
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| 引用本文： | 李艳秋.浸没式ArF光刻最新进展[J].电子工业专用设备,2006,36(3):27-35. |
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| 作者姓名： | 李艳秋 |
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| 作者单位： | 中国科学院的电工研究所,北京,100080 |
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| 基金项目： | 国家科技攻关项目,科技部科研项目 |
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| 摘 要： | 简单概述了浸没式ArF的发展历史、特点和面临的科学技术问题,在跟踪报道国内外最新研究进展的同时,介绍前沿光刻技术的研发特点和研究手段,强调协同设计研究的重要地位,并揭示浸没式ArF光刻不是干式ArF光刻的简单移置和延续。
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| 关 键 词： | 浸没式ArF光刻 下一代光刻 PR0LITH MicroCruiser 分辨率增强 |
| 文章编号： | 1004-4507(2006)03-0027-09 |
| 收稿时间： | 01 20 2006 12:00AM |
| 修稿时间： | 2006年1月20日 |
Most Recent Development of Immersion ArF Lithography |
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| LI Yan-qiu.Most Recent Development of Immersion ArF Lithography[J].Equipment for Electronic Products Marufacturing,2006,36(3):27-35. |
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| Authors: | LI Yan-qiu |
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| Institution: | The Institute of Electrical Engineering of Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | Outline of the history, features and challenges of immersion ArF lithography is given in this paper. The most recent development of immersion ArF lithography is presented by tracing recent publications and news. The method and trace of R & D in advanced lithography area is introduced which reveals that the co-design is the most important. These also prove that immersion ArF lithography and dry ArF lithography are significant different. |
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| Keywords: | Immersion ArF Lithography Next Generation Lithography (NGL) PROLITH MicroCruiser Resolution Enhancement Technology (RET) |
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