| AlSb/GaAs(001)失配位错的高分辨电子显微学研究 |
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| 引用本文： | 温才,李方华,邹进,陈弘. AlSb/GaAs(001)失配位错的高分辨电子显微学研究[J]. 物理学报, 2010, 59(3): 1928-1937 |
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| 作者姓名： | 温才 李方华 邹进 陈弘 |
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| 作者单位： | (1)Centre for Microscopy and Microanalysis and Materials Engineering,The University of Queensland,St. Lucia Queensland 4072,Australia; (2)中国科学院物理研究所北京凝聚态物理国家实验室,北京 100190 |
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| 基金项目： | 国家自然科学基金（批准号：50672124）资助的课题. |
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| 摘 要： | 用200kV六硼化镧光源的高分辨透射电子显微镜观察了AlSb/GaAs(001)外延薄膜的失配位错,结合解卷处理方法把[110]高分辨电子显微像转换为试样的结构投影图,其分辨率接近电子显微镜的信息极限.根据赝弱相位物体近似像衬理论,通过分析AlSb薄膜完整区解卷像的衬度随试样厚度的变化,确定了哑铃原子对中Al和Sb原子的位置.在此基础上构建出失配位错的结构模型,再结合模拟像与实验像的匹配,确定了AlAs型界面以及Lomer和60°两类失配全位错的核心结构.
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| 关 键 词： | 高分辨电子显微像 解卷处理 界面 失配位错 |
| 收稿时间： | 2009-12-21 |
High-resolution electron microscopy of misfit dislocations in AlSb/GaAs(001)system |
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| Wen Cai,Li Fang-Hua,Zou Jin,Chen Hong. High-resolution electron microscopy of misfit dislocations in AlSb/GaAs(001)system[J]. Acta Physica Sinica, 2010, 59(3): 1928-1937 |
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| Authors: | Wen Cai Li Fang-Hua Zou Jin Chen Hong |
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| Abstract: | The detailed core structures of misfit dislocations in the AlSb/GaAs(001) hetero structure system were studied by 200 kV LaB_6 filament high-resolution electron microscope. In combination with image deconvolution, the [110] images were transformed into the projected structure maps, and the image resolution was enhan ced up to the information limit of the microscope. To distinguish Al and Sb atoms in the AlSb film, the image contrast change with the sample thickness was analyzed for the perfect region in dec... |
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| Keywords: | high-resolution electron microscopic image image deconvolution interface misfit dislocation |
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