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低功率驱动的高功率微波放大器实验研究
引用本文:吴洋,许州,徐勇,金晓,常安碧,李正红,黄华,刘忠,罗雄,马乔生,唐传祥. 低功率驱动的高功率微波放大器实验研究[J]. 物理学报, 2011, 60(4): 44102-044102
作者姓名:吴洋  许州  徐勇  金晓  常安碧  李正红  黄华  刘忠  罗雄  马乔生  唐传祥
作者单位:(1)清华大学工程物理系,北京 100084; (2)中国工程物理研究院应用电子学研究所,绵阳 621900
基金项目:国家自然科学基金(批准号:10347099)和国家高技术研究发展计划(批准号:863-803-403)资助的课题.
摘    要:在器件设计上,针对低功率驱动的高功率微波放大器或高增益放大器中的高次模激励和自激振荡问题,采取了降低电子束同器件前端结构耦合等措施,来保证器件在工作区间完全处于放大状态,通过PIC模拟,设计了低功率驱动的S波段高功率微波放大器(电子束:流强7.5 kA,电子能量750 kV),注入微波6.8 kW时,模拟微波输出功率1.7 GW,增益53.9 dB.在Sinus加速器平台上开展了相应的实验研究: 注入微波62 kW时,微波输出功率达到2.04 GW(电子束:流强8 kA,电子能量800 kV), 输出频率关键词:高功率微波微波器件高增益模式控制

关 键 词:高功率微波  微波器件  高增益  模式控制
收稿时间:2009-12-24

Experimental study on a high power microwave amplifier driven by low rf power
Wu Yang,Xu Zhou,Xu Yong,Jin Xiao,Chang An-Bi,Li Zheng-Hong,Huang Hua,Liu Zhong,Luo Xiong,Ma Qiao-Sheng,Tang Chuan-Xiang. Experimental study on a high power microwave amplifier driven by low rf power[J]. Acta Physica Sinica, 2011, 60(4): 44102-044102
Authors:Wu Yang  Xu Zhou  Xu Yong  Jin Xiao  Chang An-Bi  Li Zheng-Hong  Huang Hua  Liu Zhong  Luo Xiong  Ma Qiao-Sheng  Tang Chuan-Xiang
Affiliation:Department of Engineering Physics, Tsinghua University, Beijing 100084, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China;Department of Engineering Physics, Tsinghua University, Beijing 100084, China
Abstract:In order to suppress high order mode self-oscillation in a high gain amplifier, some special procedures, such as decreasing the coupling between beam and rf field in the forepart of the amplifier, are taken such that the tube works in a fully amplified state in an operation range. In simulation, the rf output power is 1.7 GW with a beam of 7.5 kA at 750 kV when input power is 6.8 kW and the corresponding gain is 53.9dB. Based on the results from 2D PIC simulation, the experiment is performed on the Sinus accelerator. In experiment, the amplifier is driven by a beam of 8 kA at 800 kV, and the maximum output power is 2.04 GW when input power is 62 kW; the maximum gain reaches 46.7dB when the input reduces to 39 kW, the corresponding output power is about 1.84 GW. Both the simulation and the experiment prove that a kW-level rf power can drive the tube to generate a GW-level output power.
Keywords:high power microwave  microwave device  high gain  mode control
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