Enhancing properties of organic light-emitting diodes with LiF inside the hole transport layer |
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| Authors: | Enyu Zhou Zhenbo Deng Zhaoyue Lv Zheng Chen Denghui Xu Yongsheng Wang |
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| Institution: | aInstitute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, PR China;bDepartment of Mathematics and Physics, Beijing Technology and Business University, Beijing 100037, PR China |
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| Abstract: | A new device has been made by inserting thin LiF layer in N,N′-diphenyl-N,N′-bis(1-napthyl–phenyl)-1, 1′-biphenyl-4,4′-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure. |
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| Keywords: | LiF Hole mobility Buffer layer Blocking layer |
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