Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber |
| |
| Authors: | J Y Peng H M Tan Y G Wang B S Wang J G Miao L S Qian X Y Ma |
| |
| Institution: | (1) Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, 130033, China;(2) Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China;(3) Graduated School of Chinese Academy of Science, Beijing, 100039, China |
| |
| Abstract: | By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
